NDLI: Thermoelectric properties of nonstoichiometric TiO as a promising oxide material for high-temperature thermoelectric conversion

Content Provider	IEEE Xplore Digital Library
Author	Okinaka, N. Akiyama, T.
Copyright Year	2005
Description	Author affiliation: Center for Adv. Res. of Energy Conversion Mater., Hokkaido Univ., Sapporo, Japan (Okinaka, N.; Akiyama, T.)
Abstract	The thermoelectric properties of a nonstoichiometric titanium oxide (TiO/sub 1.1/) are investigated in terms of materials for high-temperature thermoelectric conversion. The electrical conductivity, /spl sigma/, of TiO/sub 1.1/ increases up to ca. 9000 S/m at 800 /spl deg/C, is showing semiconducting behavior. The Seebeck coefficient, /spl alpha/, of TiO/sub 1.1/ shows a general trend in which the absolute value increases gradually from ca. 0.4 mV/K at 300/spl deg/C to ca. 1.0 mV/K at 950/spl deg/C. As a consequence, the power factor, /spl alpha//sup 2//spl sigma/, reaches ca. 8.6/spl times/10/sup -3/ W/(K/sup 2//spl middot/m), the largest value of all reported oxide materials. The thermal conductivity, /spl kappa/, of TiO/sub 1.1/ increases with temperature, from ca. 1.3 W/(K/spl middot/m) at 300/spl deg/C to ca. 7.1 W/(K/spl middot/m) at 950/spl deg/C. In spite of the considerably large values of /spl kappa/, the figure of merit, Z=/spl alpha//sup 2//spl sigma///spl kappa/, reaches 1.6/spl times/10/sup -3/ K/sup -1/ for TiO/sub 1.1/ at 700/spl deg/ C. The extremely large power factor of TiO/sub 1.1/ compared to other metal oxides can be attributed to the large carrier density. The dimensionless figure of merit, ZT, of 1.64 attained by TiO/sub 1.1/ at 800/spl deg/C is the largest value of all reported other thermoelectric materials in this temperature region. And that TiO/sub 1.1/ has ZT values of nearly unity or greater in the range of 500/spl deg/C to 1000/spl deg/C, demonstrates the usefulness of the nonstoichiometric titanium oxides for high-temperature thermoelectric conversion.
Starting Page	34
Ending Page	37
File Size	279549
Page Count	4
File Format	PDF
ISBN	0780395522
ISSN	10942734
DOI	10.1109/ICT.2005.1519880
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoelectricity Conducting materials Temperature Thermal conductivity Semiconductor materials Titanium Crystalline materials Crystallization Reactive power Oxidation
Content Type	Text
Resource Type	Article

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