NDLI: Effects of annealing electrodeposited bismuth telluride films

Content Provider	IEEE Xplore Digital Library
Author	Stoltz, N.G. Snyder, G.J.
Copyright Year	2002
Description	Author affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA (Stoltz, N.G.; Snyder, G.J.)
Abstract	Thermoelectric thin films exhibit different qualities when compared with bulk materials. The goal however is to achieve thermoelectric properties of bulk materials from electrodeposited thin films. Thin films are produced by electrochemical deposition at room temperature. In order to optimize thermoelectric figure of merit proper carrier concentration must be obtained. The carrier concentration can be observed through resistivity measurements of thin film Bi/sub 2/Te/sub 3/ n-type depositions on thin chromium-gold substrates. Seebeck coefficient measurements are performed on Bi/sub 2/Te/sub 3/ n-type thin films deposited on molybdenum foil. Annealing samples in the presence of hydrogen argon forming gas increases thermopower and resistivity consistent with a decrease in carrier concentration. Annealing between 200 and 500 Celsius for 1 to 20 hours was tested. This produces films with resistivity of 1 m/spl Omega/cm but a Seebeck coefficient of only -60 /spl mu/V/K. Samples are suspected of remaining too heavily doped even after annealing. These results suggest there are defects in thin films that cannot be removed by annealing alone.
Starting Page	28
Ending Page	30
File Size	198763
Page Count	3
File Format	PDF
ISBN	0780376838
DOI	10.1109/ICT.2002.1190258
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Bismuth Thermoelectricity Transistors Sputtering Tellurium Temperature Conductivity measurement Substrates Performance evaluation
Content Type	Text
Resource Type	Article

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