NDLI: Influence of structures and compositions on thermoelectric properties of silicon borides

Content Provider	IEEE Xplore Digital Library
Author	Mukaida, M. Tsunoda, T. Ueda, M. Imai, Y.
Copyright Year	2001
Description	Author affiliation: Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan (Mukaida, M.)
Abstract	Silicon borides have excellent potential as high-temperature thermoelectric devices because of their high melting point and relatively large Seebeck coefficient. In the present work, the silicon borides were prepared by CVD, a melting and a sintering method. CVD was used for preparing samples to measure the intrinsic characteristics of the silicon borides. On the other hand, a melting and a sintering method were used for adding some elements (Fe, Cr, Co, Ni) to the silicon borides. CVD was attempted by high-frequency (80kHz) induction heating, and the samples were deposited on graphite substrates at the substrate temperatures from 1188 to 1616 K under the total pressures in the CVD chamber of 2.7 kPa. Sintered samples were prepared by a pressing from powder raw materials, and the pressed pellets were sintered at 1723 K for 2 hours in an electric furnace. The crystal structures of the samples were characterized by X-ray diffraction (XRD), and the morphologies were observed by scanning electron microscope (SEM). Electrical properties such as Seebeck coefficient, electrical conductivity and Hall effect were measured. The Seebeck coefficient of the boride reached about 400 /spl mu/VK/sup -1/, and the electrical conductivity was above 30000 Sm/sup -1/. The values of carrier mobility were less than 0.1 cm/sup -2/V/sup -1/s/sup -1/.
Sponsorship	Tianjin Lantian High-Tech Power Sources
Starting Page	225
Ending Page	228
File Size	387402
Page Count	4
File Format	PDF
ISBN	0780372050
ISSN	10942734
DOI	10.1109/ICT.2001.979874
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-08
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoelectricity Silicon Scanning electron microscopy Conductivity Thermoelectric devices Iron Chromium Temperature Pressing Powders
Content Type	Text
Resource Type	Article

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