NDLI: Reliability analysis for power MOSFET based on multi-physics simulation

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Proceedings. Ninth IEEE European Test Symposium, 2004. ETS 2004.

Reliability analysis for power MOSFET based on multi-physics simulation

Content Provider	IEEE Xplore Digital Library
Author	Shuo Li Hong Wang Shiyuan Yang
Copyright Year	2015
Description	Author affiliation: Dept. of Autom., Tsinghua Univ., Beijing, China (Shuo Li; Hong Wang; Shiyuan Yang)
Abstract	Power MOSFET plays an increasingly important role in power electric system and safety critical field. Study on reliability and prognostic method of power MOSFET is critical in ensuring safety. This pape r proposes a reliability analysis method for power MOSFET based on multi-physics simulation. Electric-thermal - structure models are studie d for the construction of health state dictionary, which records the health working state of online power MOSFET under certain working condition. Based on the health state dictionary and in-situ monitoring data, a health criterion function is used to evaluate the state of device. The methodology can be served as the bases for further prognostic study and remain useful life prediction.
Starting Page	1
Ending Page	2
File Size	429497
Page Count	2
File Format	PDF
ISBN	9781479976034
DOI	10.1109/ETS.2015.7138731
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-25
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reliability Employee welfare Load modeling MOSFET Power dissipation Junctions Insulated gate bipolar transistors simulation power MOSFET prognostic reliability
Content Type	Text
Resource Type	Article

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