NDLI: Performance analysis of a microwave low-noise amplifier under laser illumination

Content Provider	IEEE Xplore Digital Library
Author	Caddemi, A. Cardillo, E. Crupi, G. Salvo, G.
Copyright Year	2015
Description	Author affiliation: DICIEAMA Eng. Dept., Univ. of Messina, Messina, Italy (Caddemi, A.; Cardillo, E.; Crupi, G.; Salvo, G.)
Abstract	This paper analyzes in detail the performance changes of a GaAs HEMT-based low-noise amplifier under visible (650 nm) laser exposure. The device employed was first characterized in dark and illuminated conditions over the 2-18 GHz frequency range in terms of DC, scattering and noise parameters. Subsequently, it was modeled by means of a linear circuit model with associated noise sources in both conditions. By employing the experimental results, a low noise amplifier has then been designed and optimized for dark mode operation in the 7.5-8.5 GHz frequency range. Finally, the performance of the LNA under light exposure has been evaluated. On the basis of the device performance variations under VIS light exposure, we expected either a severe degradation of the noise figure, a slight increase of the amplifier gain and a moderate variation of the input/output matching. Instead, the obtained results exhibited a moderate degradation of the overall LNA performance due to device illumination, except for the input matching level which showed to be improved. We then analyzed the correlation between the device model variations and the amplifier behavior to get a deeper insight into the observed trends.
Starting Page	90
Ending Page	93
File Size	1432309
Page Count	4
File Format	PDF
ISBN	9781467375153
e-ISBN	9781467375160
DOI	10.1109/TELSKS.2015.7357744
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-14
Publisher Place	Serbia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs Logic gates Impedance matching Stimulated emission Optical modulation Optical reflection Market research Noise parameters GaAs HEMT Low-noise amplifier Light exposure Scattering parameters
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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