NDLI: Selective redundancy to improve reliability and to slow down delay degradation due to gate oxide breakdown

Content Provider	IEEE Xplore Digital Library
Author	Saemrow, H. Cornelius, C. Gorski, P. Tockhorn, A. Timmermann, D.
Copyright Year	2012
Description	Author affiliation: Department of Electrical Engineering, University of Rostock, Germany (Saemrow, H.; Cornelius, C.; Gorski, P.; Tockhorn, A.; Timmermann, D.)
Abstract	Because of the aggressive scaling into the nanometer regime, degradation due to wearout significantly impairs design parameters. For instance, such wearout is caused by gate oxide breakdown, which decreases the operating lifetime of integrated circuits to an extent that cannot be neglected by circuit designers to date. In this paper, we introduce an approach which applies selective redundancy to different combinational designs in order to improve reliability as regards gate oxide breakdown. Therefore, the most vulnerable transistor stacks of standard cells are doubled based on activity and the propagation delay of the design. Finally, reliability improvements of up to 75 % are presented that are gained with Spice simulations. Such improvements come at the price of overhead for area and power consumption as well as delay of at most 14 %. However, it is interesting to notice that the initial delay penalty of our enhanced designs finally turn into a timing advantage, as the designs are more and more affected by wearout over time. Hence, this advantage translates into further reliability improvements when clock requirements are also considered. Besides, it needs to be noted that the presented strategies can additionally improve defect yield.
Starting Page	12
Ending Page	15
File Size	715938
Page Count	4
File Format	PDF
ISBN	9781467311878
e-ISBN	9781467311885
e-ISBN	9781467311861
DOI	10.1109/DDECS.2012.6219015
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-18
Publisher Place	Estonia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Logic gates Integrated circuit reliability Reliability engineering Propagation delay Delay delay degradation Integrated circuits redundant systems reliability gate oxide breakdown
Content Type	Text
Resource Type	Article

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