NDLI: Modeling the effects of plasma-induced physical damage on subthreshold leakage current in scaled MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Eriguchi, K. Kamei, M. Takao, Y. Ono, K.
Copyright Year	2010
Description	Author affiliation: Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan (Eriguchi, K.; Kamei, M.; Takao, Y.; Ono, K.)
Abstract	This paper presents the impacts of plasma-induced damage on an off-state leakage current increase in scaled MOSFETs. Si recess structure in the source/drain extension region formed by high-energy ion bombardment is focused on. In addition to the effect of gate length shrinkage on subthreshold leakage current (I) increase discussed so far, plasma-induced damage (PID) is found to increase I drastically, in particular, for the MOSFET with a gate length shorter than 65 nm. Technology CAD simulations were performed to verify the effect. Since the recess depth is modeled by an analytical expression with the energy of ion from plasma on the basis of a modified range theory, the increase in I can be estimated from plasma process condition. A scenario for significant enhancement in the statistical I-distribution by PID is also discussed.
Starting Page	94
Ending Page	97
File Size	613302
Page Count	4
File Format	PDF
ISBN	9781424457731
e-ISBN	9781424457755
DOI	10.1109/ICICDT.2010.5510280
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-02
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Subthreshold current MOSFETs Leakage current Plasma simulation Plasma devices Plasma sources Threshold voltage Plasma applications Energy consumption Tunneling threshold voltage device simulation gate length plasma-induced damage recess structure subthreshold leakage
Content Type	Text
Resource Type	Article

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