NDLI: Quantum ballistic simulation study of InAs Quantum Well MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Biswas, Sudipta Romen Datta, Kanak Shadman, Abir Rahman, Ehsanur Khosru, Quazi D. M.
Copyright Year	2014
Description	Author affiliation: Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh (Biswas, Sudipta Romen; Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.)
Abstract	In this work, quantum ballistic simulation study of a novel III–V InAs Quantum Well MOSFET is presented. To simulate the device in quantum ballistic regime, nonequilibrium Green's function formalism has been used. 2D Poisson and Schrodinger equations are solved in self-consistent manner taking into account 2D electrostatics and other quantum mechanical effects. Strong carrier confinement in the InAs quantum well allows the application of efficient mode space approach in quantum ballistic simulation. Simulation results for the QW device with 30 nm gate length are reported. At the same time, effect of gate length variation on the quantum ballistic characteristics is explored.
Starting Page	671
Ending Page	674
File Size	3806725
Page Count	4
File Format	PDF
e-ISBN	9781479941667
DOI	10.1109/ICECE.2014.7026921
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-20
Publisher Place	Bangladesh
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates MOSFET Energy barrier III-V semiconductor materials Mathematical model Silicon Performance evaluation 2D Electrostatics Quantum Well MOSFET Delta Doping III–V Semiconductors Ballistic Transport
Content Type	Text
Resource Type	Article

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