NDLI: Variable gain active predistorter with linearity enhancement for a 2.4 GHz SiGe HBT power amplifier design

Content Provider	IEEE Xplore Digital Library
Author	Kuei-Cheng Lin Hwann-Kaeo Chiou Po-Chang Wu Chu-Jung Sha Chun-Lin Ko Da-Chiang Chang Ying-Zong Juang
Copyright Year	2012
Description	Author affiliation: Chip Implementation Center, National Applied Research Laboratories, Hsinchu, Taiwan, R.O.C. (Po-Chang Wu; Chu-Jung Sha; Chun-Lin Ko; Da-Chiang Chang; Ying-Zong Juang) \|\| Department of Electrical Engineering, National Central University, Jhongli, Taiwan, R.O.C. (Kuei-Cheng Lin; Hwann-Kaeo Chiou)
Abstract	This paper proposes a 2.4 GHz SiGe HBT differential power amplifier (PA) with a novel on-chip variable gain active predistorter (PD) for linearity enhancement. The fully differential active PD provides an open collector adaptive bias control which can effectively enhance the linearity while improve power added efficiency (PAE). The PA with active PD achieves an output 1-dB compression (OP1dB) of 20 dBm, a gain control range of 10 dB, a PAE of 30%, and an error vector magnitude (EVM) improvement of 2.4 % under OFDM/64-QAM modulation signal. The fabricated die size including pads is less than 0.74 $mm^{2}$ and suitable for highly integrated linear PA.
Starting Page	1
Ending Page	4
File Size	526966
Page Count	4
File Format	PDF
ISBN	9781457720802
e-ISBN	9781457720819
DOI	10.1109/VLSI-DAT.2012.6212650
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-23
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Linearity Power amplifiers Silicon germanium Gain Heterojunction bipolar transistors OFDM SiGe HBT Active predistorter error vector magnitude (EVM) power added efficiency (PAE) power amplifier (PA)
Content Type	Text
Resource Type	Article

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