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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tang, W.M. Leung, C.H. Lai, P.T. |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong (Tang, W.M.; Leung, C.H.; Lai, P.T.) |
| Abstract | Hafnium oxide $(HfO_{2})$ is successfully used as gate insulator for fabricating metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone $N_{2}$ annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled measurement system. Experimental results show that sensitivity increases with the annealing temperature. Higher annealing temperature can enhance the densification of the $HfO_{2}$ film; improve the oxide stoichiometry; and facilitate the growth of a $SiO_{2}$ interfacial layer to give better interface quality, thus causing a remarkable reduction of the current of the sensor under air ambient. The effects of hydrogen adsorption on the barrier height and hydrogen-reaction kinetics are also investigated. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 450171 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424425396 |
| DOI | 10.1109/EDSSC.2008.4760752 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-12-08 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Annealing Temperature sensors Hafnium oxide Hydrogen Electrodes Silicon carbide Polarization Insulation Metal-insulator structures Temperature measurement |
| Content Type | Text |
| Resource Type | Article |
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