NDLI: Developing a power amplifier module standard

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2009 Reliability of Compound Semiconductors Digest (ROCS)

2009 ROCS workshop proceedings [front matter and table of contents]

Session I: Gallium nitride I

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Reliability of AlGaN/GaN HEMT: Impact of acceleration condition on dominant degradation mechanism

Reliability of AlGaN/GaN HEMTs under DC- and RF-operation

High temperature RF operation: Effects on reliability analysis

Session II: Gallium nitride II

Comparison of DC measurement methods to determine GaN HEMT reliability

Critical voltage for electrical reliability of GaN high electron mobility transistors on Si substrate

Recent advances on the understanding of the physics of failure of GaN on SiC FET technology

Self heating of AlGaN/GaN HEMTs in pulsed operation

Session III: Qualification

Reliability study of shape factors on metal-insulator-metal (MIM) capacitors

Machine model ESD tester for enhanced capacitor reliability

Developing a power amplifier module standard

RF Arrhenius life testing of X-band high voltage GaAs PHEMTs

Session IV: Packaging

Comparison of acceleration models for THB induced degradation

Measuring and comparing humidity acceleration factors of compound semiconductors

Qualification challenges and results on flip-chip process

Reliability evaluation of hermetic GaAs HEMT MMICs using wafer-scale-assembly technology for compact and light-weight applications

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop]

2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]

[Reliability of Compound Semiconductors] ROCS Workshop 2006

[Reliability of Compound Semiconductors] ROCS Workshop, 2005.

JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004.

Developing a power amplifier module standard

Content Provider	IEEE Xplore Digital Library
Author	Roesch, W.J.
Copyright Year	2009
Description	Author affiliation: TriQuint Semiconductor, Inc., 2300 N.E. Brookwood Parkway, Hillsboro, Oregon 97124-5300 (Roesch, W.J.)
Abstract	At JEDEC JC-14.7 meetings over the past couple of years, reliability professionals working with Compound Semiconductors have been discussing some kind of “JEDEC Standard” for laminate-based Power Amplifier Modules that are currently utilized in most cell phones (and any other related volume application for this style of module). In the past, the discussions have compared standard qualification requirements from leading manufacturers and several customers. The requirements are similar from company-to-company and from customer-to-customer. Recently, a Task Group within the Committee for Compound Semiconductor Reliability and Quality (JC-14.7) has been addressing various questions about developing a standard, and this summary is intended to document the progress and publicize the development.
Starting Page	97
Ending Page	102
File Size	270454
Page Count	6
File Format	PDF
ISBN	9780790801247
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-11
Publisher Place	USA
Access Restriction	Subscribed
Subject Keyword	Power amplifiers Standards development Failure analysis Testing Substrates Humidity Semiconductor optical amplifiers Qualifications Sequential analysis Semiconductor device reliability
Content Type	Text
Resource Type	Article

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