NDLI: The effect of elevated temperature lifetest on low frequency noise performance in GaAs PHEMT dual gate MMICs [LNA example]

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The effect of elevated temperature lifetest on low frequency noise performance in GaAs PHEMT dual gate MMICs [LNA example]

Content Provider	IEEE Xplore Digital Library
Author	Chou, Y.C. Callejo, L. Biedenbander, M. Lee, K. Allen, B. Lai, R. Kan, Q. Grundbacher, R. Leung, D. Eng, D. Block, T. Oki, A.
Copyright Year	2004
Description	Author affiliation: Northrop Grumman Space Technol., Redondo Beach, CA, USA (Chou, Y.C.; Callejo, L.; Biedenbander, M.; Lee, K.; Allen, B.; Lai, R.; Kan, Q.; Grundbacher, R.; Leung, D.; Eng, D.; Block, T.; Oki, A.)
Abstract	The dual gate layout configuration has become a versatile approach for compact and high performance MMIC design for commercial, and military/space applications. In this paper, we describe a method that was developed to lifetest compact (0.81 mm/sup 2/) dual gate GaAs PHEMT low noise amplifiers (LNAs) operating from DC to 1 GHz. The objective of the lifetest is to evaluate the effect of elevated temperature on low frequency noise performance from 10-40 MHz. The results exhibit a decrease of noise figure (NF) at 10-40 MHz (approximately 0.25 to 0.5 dB) in a dual gate LNA subjected to lifetest at T/sub ambient/ of 200/spl deg/C. This might be attributed to the gate leakage current reduction at either the interface of gate metal-AlGaAs or nitride-AlGaAs, thus possibly reducing the effect of generation-recombination (primary origin of low frequency noise). On the other hand, the change of noise figure at frequencies beyond 100 MHz is not noticeable. In summary, we have demonstrated a method to effectively lifetest a compact and high performance MMIC designed with a dual gate configuration.
Sponsorship	JEDEC JC-14.7 Comm. on Gallium Arsenide Reliability and Quality Stand
Starting Page	69
Ending Page	79
File Size	368476
Page Count	11
File Format	PDF
ISBN	0790801051
DOI	10.1109/ROCS.2004.184348
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	JEDEC
Subject Keyword	Temperature Low-frequency noise Gallium arsenide PHEMTs MMICs Noise figure Low-noise amplifiers Noise measurement Leakage current Frequency
Content Type	Text
Resource Type	Article

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