NDLI: A compact inverted-spacer TFT for high-density SRAMs

Content Provider	IEEE Xplore Digital Library
Author	Pfiester, J.R. Lin, J.-H. Mocala, K. Ku, Y.-C. Higman, J. McNelly, T. Blackwell, M. Kaushik, V. James, B.M. Hegde, R.I.
Copyright Year	1994
Description	Author affiliation: Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA (Pfiester, J.R.; Lin, J.-H.; Mocala, K.; Ku, Y.-C.; Higman, J.; McNelly, T.; Blackwell, M.; Kaushik, V.; James, B.M.; Hegde, R.I.)
Abstract	Polysilicon thin-film transistors (TFT) are typically used in high-density SRAMs due to their low standby power dissipation and high on/off current ratio. However, as the bitcell area continues to decrease for higher density SRAMs circuit applications, less space is available for integrating the TFT into the bitcell. In this paper, a new TFT structure is proposed which is self-aligned to the underlying NMOS device, thereby providing a compact load element that exhibits excellent device performance at reduced power-supply voltages. The inverted-spacer TFT channel is formed in a narrow poly-filled lateral cavity around the inside perimeter of the bulk NMOS polysilicon gate stack.
Starting Page	101
Ending Page	102
File Size	267144
Page Count	2
File Format	PDF
ISBN	0780319214
DOI	10.1109/VLSIT.1994.324435
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-06-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Random access memory MOS devices Annealing Dielectrics Oxidation Dry etching Resists Research and development Laboratories
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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