NDLI: Planarized aluminum deposition of TiW and TiN layers by high temperature evaporation

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Planarized aluminum deposition of TiW and TiN layers by high temperature evaporation

Content Provider	IEEE Xplore Digital Library
Author	Georgiou, G.E. Cheung, K.P. Liu, R.
Copyright Year	1989
Description	Author affiliation: AT&T Bell Labs., Murray Hill, NJ, USA (Georgiou, G.E.; Cheung, K.P.; Liu, R.)
Abstract	The evaporation of Al onto a heated TiW- or TiN-coated substrate is used to planarize topography. The final temperature of 450 degrees C provides enough Al mobility to planarize 2- mu m-wide features. The deposition of 1.5-2.0 times the feature depth with a >250/450 degrees C two-temperature process and a deposition rate approximately=100 AA/s gives good planarization uniformity over >6-cm wafer radius. Submicron trenches are planarized without voids, whereas windows with h/w>1 have voids. Also, 1- mu m-deep trenches are filled, whereas 2- mu m-deep trenches are not filled with a similar process. Scanning electron microscopy correlates planarization and via filling with the evaporation process and substrate topography. The effect of high-temperature evaporation on materials integrity is studied with diode leakage measurements. At 450 degrees C for <2 min required for the second step, there is no Al/(TiW or TiN)/Si interaction. However, the process is close to the failure temperature of the 1000-AA-thick (less than or approximately equal to 500 AA thick in 1 mu m features) TiW barrier layer since Al spiking is seen when the final step is >or approximately=500 degrees C.
Starting Page	315
Ending Page	321
File Size	699835
Page Count	7
File Format	PDF
DOI	10.1109/VMIC.1989.77990
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-06-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Tin Temperature Planarization Filling Diodes Radio frequency Surfaces Electrons Metallization
Content Type	Text
Resource Type	Article

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