NDLI: A two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM

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A two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM

Content Provider	IEEE Xplore Digital Library
Author	Moy, D. Schadt, M. Hu, C.K. Kaufman, F. Ray, A.K. Mazzeo, N. Baran, E. Pearson, D.J.
Copyright Year	1989
Description	Author affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA (Moy, D.; Schadt, M.; Hu, C.K.; Kaufman, F.; Ray, A.K.; Mazzeo, N.; Baran, E.; Pearson, D.J.)
Abstract	Planarization of VLSI interconnect structures is recognized as a crucial element in advanced BEOL. A structure is presented which uses full oxide planarization before the first and second metal layers, W studs for contacts and interlevel vias, and Ti/Al(2.5%Cu)/Si metal lines patterned by reactive ion etching. This structure has been successfully implemented both on BEOL test sites and in device runs to fabricate a selectively scaled 0.5- mu m-channel-length 64-kb high-performance CMOS SRAM chip. Electrical testing results show contact resistances and metal test site yields equal to or better than that achieved with metal lift-off processing. Functional testing of the 64-kb SRAM produced many chips with better than 90% yield, which is also equal to or better than that achieved with a nonplanarized lift-off process. Use of the M2 level in this chip design as a bit line strap reduced access time from 11 ns without M2 to roughly 6 ns with M2. No degradation of device characteristics due to the BEOL processing could be detected.
Starting Page	26
Ending Page	32
File Size	644674
Page Count	7
File Format	PDF
DOI	10.1109/VMIC.1989.78072
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-06-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Wiring Dielectrics Planarization Very large scale integration Testing Integrated circuit interconnections Contacts Conductivity Electromigration
Content Type	Text
Resource Type	Article

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