NDLI: Hot-Electron Trapping and Generic Reliability of p + Polysilicon/SiO2/Si Structures for Fine-Line CMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Manchanda, L.
Copyright Year	1986
Description	Author affiliation: AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (Manchanda, L.)
Abstract	The generic reliability of p+ polysilicon/SiO2/Si structure has been investigated using avalanche injection method on MOS capacitors. Hot-electron trapping in p+ polysilicon/SiO2/Si capacitors with 250Å and 500Å thick oxides was compared with n+ polysilicon/SiO2/Si capacitors. For the identical injection conditions, p+ polysilicon gate capacitors show larger threshold voltage shifts compared to n+ polysilicon gate capacitors with the same thickness. These threshold voltage shifts were significantly reduced after the standard low temperature H2 anneal. A correlation of hot-electron trapping before and after the hydrogen anneal indicates that boron atoms themselves do not act as electron traps in SiO2, but the presence of boron in SiO2 enhances the water-related electron traps. A model is proposed and supported by Infrared measurements on TEOS and BTEOS films.
Starting Page	183
Ending Page	188
File Size	4725397
Page Count	6
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1986.362131
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-04-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology MOS capacitors Electron traps Silicon compounds Threshold voltage Boron Annealing Hydrogen Electron emission Electric fields
Content Type	Text
Resource Type	Article

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