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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Abadeer, W. Ellis, W. |
| Copyright Year | 2003 |
| Description | Author affiliation: IBM Microeletronics, Essex Junction, VT, USA (Abadeer, W.) |
| Abstract | The NBTI mechanism was investigated for a 5 nm gate oxide technology under AC dynamic circuit conditions in the frequency range of 2 MHz to 20 MHz and device "ON" duty factor in the range of 30% to 70%. The increase in the magnitude of threshold voltage, and the decrease in device current under AC operation are generally lower than that of DC operation by 3/spl times/ or higher. The time power function dependency of the degradation at sufficient stress times is lower than that of DC operation. These results indicate that more emphasis needs to be placed on AC behavior of NBTI for scaled CMOS technologies. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Reliability Soc |
| Starting Page | 17 |
| Ending Page | 22 |
| File Size | 428201 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780376498 |
| DOI | 10.1109/RELPHY.2003.1197714 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-03-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium compounds Titanium compounds Circuits Stress Threshold voltage Degradation CMOS technology Frequency Predictive models Microelectronics |
| Content Type | Text |
| Resource Type | Article |
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