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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sabry, Y.M. Abdel-Hafez, M.T. Abdolkader, T.M. Farouk, W.F. |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, Egypt (Farouk, W.F.) || Department of Basic Sciences, Higher Institute of Technology, Benha University, Egypt (Abdolkader, T.M.) || Silicon Vision, Egypt (Abdel-Hafez, M.T.) || Department of Electronics and Communication, Faculty of Engineering, Ain Shams University, Egypt (Sabry, Y.M.) |
| Abstract | Quantum effects play an important role in determining the Double-Gate (DG) MOSFETs characteristics. The Non-Equilibrium Green's Function (NEGF) formalism provides a rigorous description of quantum transport in nanoscale devices. The traditional NEGF is heavy in computations and not suitable for 3D or even 2D device simulation. In this article, we propose a method that reduces the simulation time dramatically without loss of accuracy. The proposed method is used to simulate a 5 nm channel length DG MOSFET. The simulation time is reduced from 72 minutes to 11 minutes per bias point on a home PC: Intel® Pentium 4 CPU 2.4GHz, 768 MB RAM. |
| Starting Page | 1 |
| Ending Page | 8 |
| File Size | 1805551 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424442140 |
| ISSN | 11106980 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-03-17 |
| Publisher Place | Egypt |
| Access Restriction | Subscribed |
| Rights Holder | NRSC |
| Subject Keyword | Quantum computing Computational modeling MOSFETs Nanoscale devices Green's function methods Computational efficiency Sparse matrices Computer vision Silicon Physics |
| Content Type | Text |
| Resource Type | Article |
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