NDLI: High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner

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High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner

Content Provider	IEEE Xplore Digital Library
Author	Jedon Kim Hansu Oh Chulho Chung Joo-Hyun Jjeong Hyunwoo Lee Seok-Hee Hwang In-Chul Hwang Young-Jin Kim Kyushik Hong Eunseung Jung Kwang-Pyuk Suh
Copyright Year	2006
Description	Author affiliation: Syst. LSI Bus., Samsung Electron. Co. Ltd., Kyunggi-Do (Jedon Kim; Hansu Oh; Chulho Chung; Joo-Hyun Jjeong; Hyunwoo Lee; Seok-Hee Hwang; In-Chul Hwang; Young-Jin Kim; Kyushik Hong; Eunseung Jung; Kwang-Pyuk Suh)
Abstract	We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the NPN BJT has been tailored to meet the requirements of the RF circuits. Careful optimization is performed using both simulation and experiment. Optimized NPN BJT has maximum current gain of ~44, collector-emitter breakdown voltage of ~7V, collector-base breakdown voltage of ~20V, early voltage of ~25V, cutoff frequency of ~8.0GHz, and maximum oscillation frequency of ~11.6GHz. Low frequency noise characteristics of the NPN BJTs are investigated and the best structure for low noise level is identified. The corner frequency of the 1/f noise is ~2kHz at a collector current of ~1.7mA, which is ~4 orders lower than that of NMOS. As the flicker noise level is much lower than the CMOS, NPN BJT is used to realize the zero intermediate frequency (ZIF) direct conversion receiver (DCR) for GSM transceiver and DVB-H tuner. The resulting GSM receiver chain has a gain of over 50dB and noise figure of 2.5-3.0dB. For DVB-H tuner operating in the range of 470-850MHz, NF of 4.5dB and IIP3 of -5dBm are achieved at a gain of 64dB
Sponsorship	THE IEEE MICROWAVE THEORY AND TECHNIQUES SOC. THE IEEE ELECTRON DEVICES SOC. THE IEEE SOLID STATE CIRCUITS SOC
File Size	378034
File Format	PDF
ISBN	0780395727
DOI	10.1109/RFIC.2006.1651191
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-06-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS process GSM Transceivers Digital video broadcasting Tuners Cutoff frequency Low-frequency noise 1f noise Doping profiles Radio frequency
Content Type	Text
Resource Type	Article

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