NDLI: SiGe-power amplifiers in flipchip and packaged technology

Content Provider	IEEE Xplore Digital Library
Author	Bischof, W. Alles, M. Gerlach, S. Kruck, A. Schuppen, A. Sinderhauf, J. Wassener, H.-J.
Copyright Year	2001
Description	Author affiliation: Atmel Wireless & Microcontrollers, Heilbronn, Germany (Bischof, W.)
Abstract	A SiGe HBT with 22 GHz ft was optimized for power applications. A driver stage measured on wafer achieves Psat=23 dBm at 1.8 GHz with PAE up to 68%. A family of SiGe power amplifiers was developed for assembly in standard PSSOP packages and in flipchip technology. There are single and dualband PAs for 900 MHz and 1800 MHz GSM bands. The PAs are fully integrated three stage devices and feature high gain, output power and power added efficiency. The ICs incorporate power control circuits and operate from one positive supply voltage which can be as low as 2.5 V. At a nominal operating voltage of 3.5 V the 900 MHz packaged amplifier delivers up to 35 dBm output power at 58% PAE. The 1800 MHz amplifier produces up to 33 dBm power at 48% PAE. The devices can survive 5 V supply voltage under full power. An optimized application design gives similar results for packaged and flipchip devices.
Starting Page	35
Ending Page	38
File Size	363860
Page Count	4
File Format	PDF
ISBN	0780366018
ISSN	15292517
DOI	10.1109/RFIC.2001.935636
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Packaging Power amplifiers Silicon germanium Germanium silicon alloys Power generation Heterojunction bipolar transistors Driver circuits Assembly Standards development Integrated circuit technology
Content Type	Text
Resource Type	Article

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