NDLI: Characterization of bulk damage in CMOS MAPS with deep N-well collecting electrode

Content Provider	IEEE Xplore Digital Library
Author	Zucca, S. Ratti, L. Traversi, G. Bettarini, S. Morsani, F. Rizzo, G. Bosisio, L. Rashevskaya, I. Cindro, V.
Copyright Year	2011
Description	Author affiliation: INFN Trieste and Università degli Studi di Trieste, I-34127, Italy (Bosisio, L.; Rashevskaya, I.) \|\| INFN Pisa and Università degli Studi di Pisa, I-56127, Italy (Bettarini, S.; Rizzo, G.) \|\| INFN Pisa, I-56127, Italy (Morsani, F.) \|\| INFN Pavia and Università di Bergamo, I-24044 Dalmine (BG), Italy (Traversi, G.) \|\| INFN Pavia and Dipartimento di Elettronica, Università degli Studi di Pavia, I-27100, Italy (Zucca, S.) \|\| INFN Pavia and Università degli Studi di Pavia, I-27100, Italy (Ratti, L.) \|\| Jožef Stefan Institute, SI-1000 Ljubljana, Slovenia (Cindro, V.)
Abstract	Monolithic active pixel sensors in CMOS technology, featuring a deep N-well as the collecting electrode (so called DNW MAPS), have been exposed to neutrons from a nuclear reactor, up to a total 1 MeV neutron equivalent fluence of about $3.7×10^{13}$ $cm^{−2}.$ The irradiation campaign was aimed at studying the effects of radiation induced displacement damage on the charge collection properties of the device, which was conceived for applications to charged particle tracking in high energy physics experiments. A number of different techniques, including electrical characterization of the front-end electronics and of DNW diodes, laser stimulation of the sensors and tests with $^{55}Fe$ and $^{90}Sr$ radioactive sources, has been employed for evaluating the device operation before and after irradiation. This paper discusses the measurement results and their relation with the bulk damage mechanisms underlying performance degradation in DNW MAPS.
Starting Page	297
Ending Page	304
File Size	1019298
Page Count	8
File Format	PDF
ISBN	9781457705854
ISSN	03796566
e-ISBN	9781457705861
DOI	10.1109/RADECS.2011.6131308
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-19
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Junctions Neutrons Sensitivity Detectors Leakage current charge collection efficiency Deep N-well sensor bulk damage CMOS MAPS
Content Type	Text
Resource Type	Article

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