NDLI: Comparison of γ and β-ray irradiation effects in sol-gel Ge-doped SiO

Content Provider	IEEE Xplore Digital Library
Author	Alessi, A. Agnello, S. Gelardi, F.M. Sporea, D.G. Oproiu, C. Brichard, B.
Copyright Year	2009
Description	Author affiliation: Department of Physical and Astronomical Sciences, University of Palermo, Via Archirafi 36, I-90123, Palermo, Italy (Alessi, A.) \|\| Department of Physical and Astronomical Sciences, University of Palermo (Agnello, S.; Gelardi, F.M.) \|\| National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor St., RO-077125, Magurele, Romania (Sporea, D.G.; Oproiu, C.) \|\| SCK-CEN, Belgian Nuclear Reserch Center, Boeretang 200, 2400 Mol, Belgium (Brichard, B.)
Abstract	We report an experimental study on the comparison between the γ or β ray induced Ge related point defects in Ge doped silica. Silica samples doped with ∼2.2 $10^{17}$ Ge $atoms/cm^{3}$ produced with the sol-gel technique have been irradiated. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E'Ge, Germanium Lone Pair Center (GLPC) and H(II) point defects. No relevant differences between the concentrations of γ or β ray induced Ge(1) and E'Ge point defects have been observed. In addition, it is found that both irradiations are able to induce GLPC with the same dose dependence. The main difference regards the formation of H(II), that arise from the reaction of GLPC with H released by irradiation, their concentration being larger after γ irradiation. It is suggested that the larger efficiency of H(II) generation by γ ray is due to the specific mechanism involving H released by irradiation. At variance, for the other Ge-related defects, our data show that the same processes of formation of such centers are involved in γ or β ray irradiation.
Starting Page	286
Ending Page	289
File Size	462410
Page Count	4
File Format	PDF
ISBN	9781457704925
ISSN	03796566
e-ISBN	9781457704932
DOI	10.1109/RADECS.2009.5994660
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-14
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Absorption Silicon compounds Glass Optical fibers radiation effects glass optical spectroscopy optical fiber materials
Content Type	Text
Resource Type	Article

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