NDLI: Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 µm SiGe:C NPN HBT technology

Content Provider	IEEE Xplore Digital Library
Author	Put, S. Simoen, E. Van Huylenbroeck, S. Claeys, C. Van Uffelen, M. Leroux, P.
Copyright Year	2008
Description	Author affiliation: Katholieke Hogeschool Kempen, B-2440 Geel, Belgium (Leroux, P.) \|\| IMEC, B-3001 Leuven, Belgium (Simoen, E.; Van Huylenbroeck, S.; Claeys, C.) \|\| Electrical Engineering Department, Katholieke Universiteit Leuven, B-3001, Belgium (Put, S.) \|\| SCK·CEN, the Belgian Nuclear Research Centre, B-2400 Mol, Belgium (Van Uffelen, M.)
Abstract	In-situ measurements during gamma radiation up to 100 kGy of 0.13µm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward-mode as in reverse-mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward-mode operation, the radiation-induced base current density increase shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse-mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.
Starting Page	426
Ending Page	431
File Size	303517
Page Count	6
File Format	PDF
ISBN	9781457704819
ISSN	03796566
e-ISBN	9781457704826
DOI	10.1109/RADECS.2008.5782757
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-10
Publisher Place	Finland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Transistors Current density Degradation Radiation effects Diffusion tensor imaging SiGe Heterojunction Bipolar Transistor Deep trench isolation High level gamma radiation In-situ measurements
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 $mu{hbox {m}}$ SiGe:C NPN HBT Technology

Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors

Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

A broadband 75 to 140 GHz amplifier in 0.13-µm SiGe HBT process

Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments

Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors

A 400GHz fMAX fully self-aligned SiGe:C HBT architecture

Gamma Radiation Effects on Different Varieties of SiGe:C HBT Technologies

Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 µm SiGe:C NPN HBT technology

Similar Documents

Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 $mu{hbox {m}}$ SiGe:C NPN HBT Technology

Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors

Influence of lateral device scaling and airgap deep trench isolation on reliability performance of 200GHz SiGe:C HBTs

A broadband 75 to 140 GHz amplifier in 0.13-µm SiGe HBT process

Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments

Characterization and modeling of low frequency noise in 0.13 µm BiCMOS SiGe:C heterojunction bipolar trasnsistors

A 400GHz fMAX fully self-aligned SiGe:C HBT architecture

Gamma Radiation Effects on Different Varieties of SiGe:C HBT Technologies

Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 µm SiGe:C NPN HBT technology