NDLI: Single Event Effects in NAND Flash memory arrays

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Single Event Effects in NAND Flash memory arrays

Content Provider	IEEE Xplore Digital Library
Author	Cellere, G. Paccagnella, A. Visconti, A. Bonanomi, M. Beltrami, S.
Copyright Year	2005
Description	Author affiliation: Padova Univ., Padova (Cellere, G.; Paccagnella, A.)
Abstract	We are showing for the first time the charge loss due to heavy ion irradiation on Hash memory arrays organized following the NAND architecture. Results complement those previously found for devices featuring a NOR architecture: large charge loss can be expected after the hit of a single ion on a single memory cell. The resulting threshold voltage shift $DeltaV_{TH}$ grows with ion LET and with applied electric field across the tunnel oxide (that is, with the programming conditions) and cannot be explained by simple generation-recombination-transport models. Further, in Floating Gates hit by a single ion a percolation path develops across the tunnel oxide, able to slowly discharge the Floating Gate.
File Size	1265981
File Format	PDF
ISBN	9780780395015
ISSN	03796566
DOI	10.1109/RADECS.2005.4365568
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-19
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge carrier processes Threshold voltage Character generation Nonvolatile memory Dielectric substrates Telephony MOSFET circuits Electrons Digital cameras Cellular phones RILC Floating Gate memories Single Event Effects NAND architecture
Content Type	Text
Resource Type	Article

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