NDLI: Radiation source dependence of degradation and recovery of irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices

Content Provider	IEEE Xplore Digital Library
Author	Ohyama, H. Vanhellemont, J. Takami, Y. Hayama, K. Sunaga, H. Poortmans, J. Caymax, M.
Copyright Year	1996
Description	Author affiliation: Kumamoto Nat. Coll. of Technol., Japan (Ohyama, H.; Vanhellemont, J.)
Abstract	The degradation and recovery of irradiated n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ epitaxial diodes and n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) are studied as a function of fluence and germanium content. The degradation of electrical performance of the devices increases with increasing fluence, while it decreases with increasing germanium content. In the Si/sub 1-x/Ge/sub x/ epitaxial layer of devices, an electron capture level which is associated with interstitial boron, is induced. The impact of radiation source on the degradation of performance is correlated with simulations of numbers of knock-on atoms and the nonionizing energy loss. From the experiment of isochronal thermal annealing, it is concluded that the electron capture levels are mainly responsible for the degradation of electrical performance.
Starting Page	66
Ending Page	71
File Size	498091
Page Count	6
File Format	PDF
ISBN	0780330935
DOI	10.1109/RADECS.1995.509753
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-18
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Germanium Radioactive decay Thermal degradation Diodes Heterojunction bipolar transistors Epitaxial layers Boron Performance loss Atomic layer deposition Atomic measurements
Content Type	Text
Resource Type	Article

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