NDLI: Solid state power supply modulator system for magnetron

Content Provider	IEEE Xplore Digital Library
Author	Vizir, V.A. Ivanov, S.N. Kovalchuk, B.M. Manilov, V.I. Shubkin, N.G. Chervyakov, V.V. Yuriev, V.V. Butakov, L.D. Tolmacev, V.I.
Copyright Year	2003
Description	Author affiliation: High Current Electron. Inst., Russian Acad. of Sci., Tomsk, Russia (Vizir, V.A.; Ivanov, S.N.; Kovalchuk, B.M.; Manilov, V.I.; Shubkin, N.G.; Chervyakov, V.V.; Yuriev, V.V.)
Abstract	Typical modulators for magnetrons are based usually on the lamp or thyratron switches [E.M. Verechagin, 1972]. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors [R. Richardson et al.]. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6/spl divide/6 /spl mu/s pulse length and frequency up to 2 kHz.
Sponsorship	Pulsed Power Sci. and Technol. Committee of the IEEE Nuclear and Plasma Sci. Soc
Starting Page	1462
Ending Page	1464
File Size	185150
Page Count	3
File Format	PDF
ISBN	0780379152
DOI	10.1109/PPC.2003.1278092
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Solid state circuits Power supplies Magnetic modulators Pulse transformers Switches MOSFETs Pulse modulation Pulsed power supplies Lamps Thyratrons
Content Type	Text
Resource Type	Article

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