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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hyeon-Seag Kim Cambell, S.A. Gilmer, D.C. Dong Myung Kim |
| Copyright Year | 1997 |
| Description | Author affiliation: Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA (Hyeon-Seag Kim) |
| Abstract | Suitable replacement materials for ultrathin SiO/sub 2/ in deeply scaled MOSFETs such as lattice polarizable films, which have much higher permittivities than SiO/sub 2/, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 /spl Aring/ layers of TiO/sub 2/ which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide. Measurements of the high and low frequency capacitance indicate that virtually no interface states are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO/sub 2/ film near the SiO/sub 2/ interfacial layer that allow a tunneling current component at low bias. |
| Starting Page | 1039 |
| Ending Page | 1042 |
| File Size | 384262 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780326512 |
| DOI | 10.1109/ICPADM.1997.616624 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-05-25 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Chemicals Photonic band gap Capacitance measurement Dielectric measurements Stress MOSFETs Lattices Polarization Permittivity Dielectrics and electrical insulation |
| Content Type | Text |
| Resource Type | Article |
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