NDLI: A New 80V 32x32ch Low Loss Multiplexer LSI for a 3D Ultrasound Imaging System

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Table of contents

Progress in Technology CAD for Power Devices, Circuits and Systems

Dedicated computation engine for power electronics application - a new architecture microcontroller

Development of Repetitive Pulsed Power Generators Using Power Semiconductor Devices

Over 1000V semi-superjunction MOSFET with ultra-low on-resistance below the Si-limit

Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

A scalable trench etch based process for high voltage vertical RESURF MOSFETs

High performance superjunction UMOSFETs with split p-columns fabricated by multi-ion-implantations

Floating island and thick bottom oxide trench gate MOSFET (FITMOS) - a 60V ultra low on-resistance novel MOSFET with superior internal body diode

Monolithic integration of trench vertical DMOS (VDMOS) power transistors into a BCD process

HMS rectifier: a novel hybrid MOS Schottky diode concept with no barrier lowering, low leakage current and high breakdown voltage

600V SOI gate drive HVIC for medium power applications operating up to 200/spl deg/C

A 600V driver IC with new short protection in hybrid electric vehicle IGBT inverter system

Evaluation of self-heating effects on an innovative SOI technology ("Venezia" process)

A study of switching-self-clamping-mode "SSCM" as an over-voltage protection feature in high voltage IGBTs

Investigations on the ruggedness limit of 6.5 kV IGBT

Direct beam lead bonding for trench MOSFET & CSTBT

All lead free IGBT module with excellent reliability

The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes

A new fault protection circuit of 600V PT-IGBT for the improved avalanche energy employing the floating p-well

High speed lateral-IGBT with a passive gate

A compact model for thin SOI LIGBTs: description, experimental verification and system application

A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications

Hot-carrier reliability of high side NDMOS in smart power SOI technologies

Impact of the back gate effect on bipolar junction transistors in smart power SOI technologies

A fast and flexible thermal simulation tool validated on smart power devices

Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection

Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching

A method for overvoltage protection of a motor driver IC

Modeling substrate currents in smart power ICs

Thermal and electrical simulation of smart power circuits by network analysis

Optimized deep trench isolation for high voltage smart power process

Thermal protection of an 80V silicon-on-insulator LDMOS transistor for power-over-Ethernet applications

Realization of robust 600V high side gate drive IC with a new isolated self-shielding structure

Wafer chip scale packages with efficient power dissipation have small foot-print for portable applications

PDP scan driver with NVDMOS and RESURF PLDMOS

56W SiC MESFET transistors with > 50% PAE for L-band applications

Architecture optimization of an N-channel LDMOS device dedicated to RF-power application

CMOS compatible super junction LDMOST with N-buffer layer

A high performance complementary bipolar process controlling base poly-Si over-etching in emitter region and using SOI or PBSOI technique

A novel drift region self-aligned SOI power MOSFET using a partial exposure technique

Low loss and small SiP for DC-DC converters

Break-through of the trade-off between on-resistance and ESD endurance in LDMOS

Modeling the onset of thermal instability in low voltage power MOS: an experimental validation

Novel low capacitance VDMOS device for switching and RF power amplification

High performance power MOSFETs with strained-Si channel

The first demonstration of the 1 cm /spl times/ 1 cm SiC thyristor chip

Cosmic radiation-induced failure mechanism of high voltage IGBT

A new combined local and lateral design technique for increased SOA of large area IGCTs

Great improvement in turn-on power dissipation of IGBTs with an extra gate charging function

1600V 4H-SiC UMOSFETs with dual buffer layers

Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs

Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions

On the safe operating area of power Schottky diodes in avalanche conditions

Investigations on current filamentation of IGBTs under undamped inductive switching conditions

Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

Analysis of E-field distributions within high-power devices using IBIC microscopy

Impact of fine surface chemical-mechanical polishing on the manufacturing yield of 1200V SiC Schottky barrier diodes

A study of correlation between traps and reverse-recovery characteristics of FWDs

High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction

Triple trench gate IGBTs

Trench IGBT behaviour near to latch-up conditions

An experimental analysis of localized lifetime and resistivity control by Helium

Zero Voltage Switching of a 1200V PT Clustered Insulated Gate Bipolar Transistor

Ultra-fast LIGBTs and superjunction devices in membrane technology

Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors

10.3 m/spl Omega/-cm/sup 2/, 2 kV Power DMOSFETs in 4H-SiC

1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances

1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

4.5 kV 60A SICGT and its Half Bridge Inverter Operation of 20kVA Class

Ultra High Power 10 kV, 50 A SiC PiN Diodes

10kV Trench Gate IGBTs on 4H-SiC

A Study of MIS - AlGaN/GaN HEMTs with SiO/sub 2/ Films as Gate Insulator

High current operation of GaN power HEMT

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

High-Voltage Diamond Vertical Schottky rectifiers

Two-stage Hot Carrier Degradation of LDMOS Transistors.

A Rugged LDMOS for LBC5 Technology

Analysis and modeling of DMOS FBSOA limited by n-p-n leakage diffusion current

Optimization of 5V power devices based on CMOS for hot-carrier degradation

Switching loss optimization of 20V devices integrated in a 0.13 μm CMOS technology for portable applications

High Performance Isolated LDMOS with Source Spacer and Asymmetric Hetero-doped Architectures

ESD robust integrated output device for smart power ICs

ESD Scalability of LDMOS Devices for Self-Protected Output Drivers

Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs

A New 80V 32x32ch Low Loss Multiplexer LSI for a 3D Ultrasound Imaging System

0.18 μm BCD -High Voltage Gate (HVG) Process to address Advanced Display Drivers Roadmap

20V Asymmetric Complementary Power Device Implementation within a 0.25um CMOS Technology for Power Management

Multi Chip Module with Minimum Parasitic Inductance for New Generation Voltage Regulator

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212)

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs

Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

A New 80V 32x32ch Low Loss Multiplexer LSI for a 3D Ultrasound Imaging System

Content Provider	IEEE Xplore Digital Library
Author	Hara, K. Sakano, J. Mori, M. Tamano, S. Sinomura, R. Yamazaki, K.
Copyright Year	2005
Description	Author affiliation: Hitachi Res. Lab., Hitachi Ltd. (Hara, K.; Sakano, J.; Mori, M.)
Abstract	This paper presents a new concept for an 80V multiplexer LSI with the world's largest 32 times 32ch cross-point switches for a real-time 3D ultrasound imaging system. This system requires hundreds of thousands of high voltage electrical switches. We propose a new gate floating type analog switch circuit with thin gate oxide power MOSFETs and a low-loss gate driving method for this LSI. The developed LSI can handle plusmn40V at 15 MHz ultrasound signal with reasonably low power dissipation (10mW/LSI) and can operate at a 33 MHz clock frequency for the first scanning operation. The developed LSIs are assembled in a hand probe and show a fine 3D volume image
Starting Page	359
Ending Page	362
File Size	1212918
Page Count	4
File Format	PDF
ISBN	0780388909
DOI	10.1109/ISPSD.2005.1488025
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ultrasonic imaging Multiplexing Large scale integration Switches Real time systems Voltage Switching circuits MOSFETs Power dissipation Clocks
Content Type	Text
Resource Type	Article

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