NDLI: Direct beam lead bonding for trench MOSFET & CSTBT

Content Provider	IEEE Xplore Digital Library
Author	Narazaki, A. Shirasawa, T. Takayama, T. Sudo, S. Hirakawa, S. Asano, N. Ogata, K. Takahashi, H. Minato, T.
Copyright Year	2005
Description	Author affiliation: Mitsubishi Electr. Corp., Fukuoka, Japan (Narazaki, A.; Shirasawa, T.)
Abstract	The next innovation in the power modules has come up with the corroboration between the power chip technology like CSTBT and die packaging technology like the direct transfer mold module, via wireless bonding technology, that is our technology "direct beam lead bonding (DBLB)". In this paper, we report the electrical characteristics and the reliabilities of a MOSFET and a CSTBT using DBLB. The DBLB type MOSFETs on-state resistance (R/sub DS(GN)/) can be reduced in 16% comparing with die conventional aluminum (Al) wire bonding type and an avalanche ruggedness (E/sub AVA/) during undamped inductive switching (UIS) is unproved approximately 2 times. It has the excellent reliability under the thermal cycling test between 233K and 398K during over 3000 cycles. Further, the DBLB type CSTBT has, under the short circuit safety operation area (SCSOA) test condition, 11% greater toughness as energy than the Al wiring type.
Starting Page	75
Ending Page	78
File Size	483304
Page Count	4
File Format	PDF
ISBN	0780388909
DOI	10.1109/ISPSD.2005.1487954
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding MOSFET circuits Circuit testing Technological innovation Multichip modules Packaging Electric variables Electric resistance Aluminum Wire
Content Type	Text
Resource Type	Article

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