NDLI: MOS bipolar gate IGBT operation

Content Provider	IEEE Xplore Digital Library
Author	Bobde, M.D. Minato, T. Thapar, N. Baliga, B.J.
Copyright Year	1999
Description	Author affiliation: Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA (Bobde, M.D.)
Abstract	A new IGBT with a P/sup +/ diverter which is connected to the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on-state voltage drop. Measurements on fabricated 4 kV IGBTs showed a forward voltage drop of 2.78 V (at collector current density of 100 A/cm/sup 2/) for diverter current of 10 mA (7.38 A/cm/sup 2/), as compared to 3.09 V of the conventional IGBT (without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02 V (at collector current density of 50 A/cm/sup 2/) for the same diverter current, as compared to 6.48 V for the conventional IGBTs. Furthermore, both the devices had nearly identical turn off time, and excellent latch-up current density.
Starting Page	181
Ending Page	184
File Size	341900
Page Count	4
File Format	PDF
ISBN	0780352904
ISSN	10636854
DOI	10.1109/ISPSD.1999.764092
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-26
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Voltage Current density Electrodes Density measurement Current measurement Electrical resistance measurement Electrons Doping Joining processes
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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