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Content Provider | IEEE Xplore Digital Library |
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Author | Thaper, N. Baliga, B.J. |
Copyright Year | 1994 |
Description | Author affiliation: Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA (Thaper, N.) |
Abstract | A new IGBT structure incorporating a shallow diverter between adjacent cells is proposed in this paper with the aim of widening the Forward Bias Safe Operating Area (FBSOA) of the IGBT. The latchup limit of the IGBT increased from 700 A/cm/sup 2/ to 1100 A/cm/sup 2/ in case of the n-channel IGBT and from 1200 A/cm/sup 2/ to 2100 A/cm/sup 2/ for the p-channel IGBT. Although there was a no improvement in the dynamic avalanche limit in the case of the p-channel IGBT, it improved significantly for the n-channel IGBT making its FBSOA much wider than that of the conventional IGBT. The incorporation of the diverter was found to result in an increase in the forward voltage drop (at a current density of 200 A/cm/sup 2/) from 1.7 V to 2.3 V and -2.3 V to -3.9 V for the n- and the p-channel IGBT, respectively. |
Starting Page | 177 |
Ending Page | 182 |
File Size | 579473 |
Page Count | 6 |
File Format | |
ISBN | 0780314948 |
ISSN | 10636854 |
DOI | 10.1109/ISPSD.1994.583697 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1994-05-31 |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Insulated gate bipolar transistors Semiconductor optical amplifiers Current density Thyristors Switching circuits Motor drives Avalanche breakdown Metallization Threshold voltage Electron emission |
Content Type | Text |
Resource Type | Article |
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