NDLI: Mass spectroscopic study of photolytically driven deposition of gallium arsenide

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Mass spectroscopic study of photolytically driven deposition of gallium arsenide

Content Provider	IEEE Xplore Digital Library
Author	Norton, D.P. Ajmera, P.K.
Copyright Year	1989
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA (Norton, D.P.)
Abstract	The authors describe results on the use of ultraviolet radiation to deposit GaAs thin films at substrate temperatures less than those necessary for the deposition of GaAs using pyrolytic means. A 1000-W Hg-Xe arc lamp is utilized to achieve deposition, with arsine and triethylgallium serving as reactants. Deposition is carried out in a low-pressure chemical vapor deposition system at a pressure of 2 Torr. It is shown that, at least for the case where the light beam is incident perpendicular to the substrate, single-crystal epitaxial GaAs films can be obtained. Further, a mass spectroscopic study of the photolytic decomposition of triethylgallium indicates that the photolytic cracking of the molecule proceeds in a manner very similar to that found in thermal decomposition.
Starting Page	351
Ending Page	355
File Size	545075
Page Count	5
File Format	PDF
DOI	10.1109/SECON.1989.132393
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-04-09
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mass spectroscopy Gallium arsenide Temperature Substrates Sputtering Optical films Chemical vapor deposition Crystalline materials Scanning electron microscopy Steel
Content Type	Text
Resource Type	Article

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