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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Marie-Ange Eyoum Hoivik, N. Jahnes, C. Cotte, J. Xiao-Hu Liu |
| Copyright Year | 2005 |
| Description | Author affiliation: IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA (Marie-Ange Eyoum; Hoivik, N.; Jahnes, C.; Cotte, J.; Xiao-Hu Liu) |
| Abstract | This paper addresses issues associated with building MEMS devices using conventional back-end-of-line (BEOL) materials and layers compatible with integrated circuit (IC) interconnect technology. Stresses inherent in these layers are of little significance for ICs, but when creating released structures, stress gradients become critical for optimum device operation. An analytical model to predict the curvature of multilayer MEMS cantilever beams has been developed. In addition, elemental analysis was performed in order to characterize the residual stress of individual films used in the analytical model. The analytical model fits the experimental data within 20%, and could be used as a guide for further design and process optimization of the MEMS devices. |
| Sponsorship | Korean Sensors Soc |
| Starting Page | 764 |
| Ending Page | 767 |
| File Size | 695021 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780389948 |
| DOI | 10.1109/SENSOR.2005.1496529 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-06-05 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology Semiconductor device modeling Micromechanical devices Residual stresses Analytical models Integrated circuit interconnections Integrated circuit technology Microelectromechanical devices Buildings Nonhomogeneous media |
| Content Type | Text |
| Resource Type | Article |
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