NDLI: Room temperature ozone sensing with conductivity and work function sensors based on indium oxide

Content Provider	IEEE Xplore Digital Library
Author	Doll, T. Fuchs, A. Eisele, I. Faglia, G. Groppelli, S. Sberveglieri, G.
Copyright Year	1997
Description	Author affiliation: Inst. fur Phys., Univ. der Bundeswehr Munchen, Neubiberg, Germany (Doll, T.)
Abstract	Indium oxide thin films were deposited on silicon substrates for work function sensing as well as on alumina (Pt) conductivity sensors. The correlation of work function and conductivity measurements due to ozone in dry and humid air reveal that a chemisorption state dominates the sensor effects at temperatures below 200 /spl deg/C. The influence of humidity is found to be comparatively small for these films. The work function method provides a sensitivity maximum at low concentrations of some ppb of ozone stable down to a substrate temperature of 40 /spl deg/C. However, thermal desorption cycles will be necessary even for restricted use of such sensors. For HSGFET work function sensors with a In/sub 2/O/sub 3/-Si/sub 3/N/sub 4/ system a response of 120 mV from 100 ppb of ozone in humid air is estimated for heaterless operation at room temperature.
Starting Page	577
Ending Page	580
File Size	369261
Page Count	4
File Format	PDF
ISBN	0780338294
DOI	10.1109/SENSOR.1997.613716
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Thin film sensors Chemical sensors Thermal sensors Indium Semiconductor thin films Sputtering Silicon Conductivity measurement Humidity
Content Type	Text
Resource Type	Article

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