NDLI: Near-future perspectives for Si and Si Bipolar Transistors

Content Provider	IEEE Xplore Digital Library
Author	Marksteiner, S. Felder, A. Meister, T.F.
Copyright Year	1992
Description	Author affiliation: SIEMENS AG, Corporate Research and Development, Microelectronics, Munich, Germany; Institut für Theoretische Physik, Leopold-Franzens-Universität Innsbruck, Austria (Marksteiner, S.) \|\| SIEMENS AG, Corporate Research and Development, Microelectronics, Munich, Germany; Institut für Nachrichtentechnik und Hochfrequennztechnik, Techn. Universität Wien, Austria (Felder, A.) \|\| SIEMENS AG, Corporate Research and Development, Microelectronics, Munich, Germany (Meister, T.F.)
Abstract	The performance limits of self-aligned npn Si-BJTs and SiGe-HBTs are investigated for different types of processing. Using a one-dimensional drift-diffusion equation solver, device simulations are carried out for different doping and germanium profiles. From these simulations network parameters are extracted, which are used as input data for the SPICE-simulation of CML ring oscillators. In addition to one verification profile, three different types of processing are considered, which are designed to give the near-future performance limits of both Si and SiGe bipolar transistors: The first one is a profile as obtained by `conventional' processing utilizing implantation and diffusion. The second one has a heavily doped base and a small, lightly doped emitter region, as might be realizable by epitaxial deposition of in-situ doped layers. The third one is similar to the second one, but uses a Si Ge/Si-strained base. The simulations show that CML gate delay times of approx. 15 ps, 10 ps and 7 ps, respectively, are realizable with these profiles.
Starting Page	535
Ending Page	538
File Size	950572
Page Count	4
File Format	PDF
ISBN	0444894780
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-09-14
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Elsevier
Subject Keyword	Doping profiles Solid modeling Analytical models Computer simulation Silicon germanium Germanium silicon alloys SPICE Bipolar transistors Differential equations Data mining
Content Type	Text
Resource Type	Article

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