NDLI: In-process control of Co silicide formation by RTA

Content Provider	IEEE Xplore Digital Library
Author	Dilhac, J-M. Ganibal, C. Nolhier, N. Moynagh, P.B. Chew, C.P. Rosser, P.J.
Copyright Year	1992
Description	Author affiliation: BNR Europe Ltd, London Road, Harlow, Essex CM17 9NA, GB.; Intel Co, Portland, USA. (Moynagh, P.B.) \|\| BNR Europe Ltd, London Road, Harlow, Essex CM17 9NA, GB. (Chew, C.P.; Rosser, P.J.) \|\| Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX, FRANCE. (Dilhac, J-M.; Ganibal, C.; Nolhier, N.)
Abstract	The results of in-situ monitoring of laser reflectivity during Rapid Thermal Annealing (RTA) of cobalt layers on silicon are presented. 120 nm thick cobalt films were deposited. The wafers were implanted with silicon to ion beam mix the interface. Annealings at 820°C were conducted, to correlate sample reflectivity changes with the formation of particular silicide phases. It is shown that changes in reflectivity of the above samples, correspond to the appearance at the surface of a particular silicide phase. A new concept, that is ``software sensing'', is also presented. It uses an advanced algorithm calculating in real-time the transfer function of the processor/wafer system. Results about the use of this algorithm to detect the formation of a particular silicide phase are presented.
Starting Page	379
Ending Page	382
File Size	1097329
Page Count	4
File Format	PDF
ISBN	0444894780
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-09-14
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Elsevier
Subject Keyword	Silicides Reflectivity Rapid thermal annealing Cobalt Silicon Monitoring Optical films Semiconductor films Ion beams Real time systems
Content Type	Text
Resource Type	Article

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