NDLI: Damage free very low electron temperature plasma process for low Flicker noise in p-MOS fabricated on (100) and (110) silicon-oriented wafers

Content Provider	IEEE Xplore Digital Library
Author	Gaubert, P. Teramoto, A. Ohmi, T.
Copyright Year	2009
Description	Author affiliation: New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-ku, Sendai 980-8579, Japan (Gaubert, P.; Teramoto, A.; Ohmi, T.)
Abstract	The evaluation of new equipments developed at the Tohoku University and based on a very low electron temperature microwave-excited high-density plasma is presented through the study of the Flicker noise. These new equipments which are working with very low electron temperature and presenting very useful features, such as an oxide growth rate regardless of the crystallographic orientation of the silicon, allow us to fabricate gate oxides of very high quality on any kind of surfaces as well as damage-free thin films. The confirmation of these features and of the quality of this technology has been confirmed from the noise measurements carried out on Si(100) and Si(110) p-MOS transistors by the extraction of several parameters such as the trap density. Moreover, the 1/f noise study in the Si(110) transistors has been done for the first time and revealed that the noise sources are the mobility fluctuations caused by the fluctuation of the scattering mechanism in the lattice in saturation and the fluctuation of the insulator charge inducing correlated flat band voltage and mobility fluctuations in the linear regime. Regarding the Si(100) transistors, the Flicker noise is explained in term of flat band voltage fluctuations in the linear regime and of mobility fluctuations in saturation.
Starting Page	177
Ending Page	180
File Size	943279
Page Count	4
File Format	PDF
ISBN	9781424443512
ISSN	19308876
DOI	10.1109/ESSDERC.2009.5331543
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-14
Publisher Place	Greece
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma temperature Electrons 1f noise Voltage fluctuations Microwave devices Crystallography Silicon Semiconductor thin films Noise measurement Scattering
Content Type	Text
Resource Type	Article

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