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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Das, B. Kae Ann Wong Black Jr., W.C. |
| Copyright Year | 2000 |
| Description | Author affiliation: Iowa State University, Ames, Iowa, USA (Das, B.) |
| Abstract | A nonvolatile latch has been demonstrated using Giant-Magneto-Resistance (GMR) thin film resistors placed atop a conventional .35µm bulk CMOS process. The latch employs two GMR resistors that are programmed in complementary states by a pulse of 20- 50mA current passing through metal lines placed immediately below the resistors. Sensing of the relative resistor values is accomplished via a cross-coupled inverter sense-amplifier that consumes zero quiescent power after regeneration and that may also be used as a conventional SRAM cell. Preliminary experimental results indicate that sensing may be accomplished in <40nsec. with a current during reading of about 420 µA. Total die size of the latch is about 248×57 sq. microns. |
| Starting Page | 372 |
| Ending Page | 375 |
| File Size | 105814 |
| Page Count | 4 |
| File Format | |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-09-19 |
| Access Restriction | Subscribed |
| Rights Holder | Non IEEE |
| Subject Keyword | Resistors Nonvolatile memory Latches Magnetic films Magnetic devices Magnetic domains CMOS process Circuits Magnetic moments EPROM |
| Content Type | Text |
| Resource Type | Article |
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