NDLI: A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns

Content Provider	IEEE Xplore Digital Library
Author	Sumi, T. Moriwaki, N. Nakane, G. Nakakuma, T. Judai, Y. Uemoto, Y. Nagano, Y. Hayashi, S. Azuma, M. Fujii, E. Katsu, S.-I. Otsuki, T. McMillan, L. Paz de Araujo, C. Kano, G.
Copyright Year	1994
Description	Author affiliation: Matsushita Electron. Corp., Kyoto, Japan (Sumi, T.; Moriwaki, N.; Nakane, G.; Nakakuma, T.; Judai, Y.; Uemoto, Y.; Nagano, Y.; Hayashi, S.; Azuma, M.; Fujii, E.; Katsu, S.-I.; Otsuki, T.)
Abstract	One of the most important features for ferroelectric material is fast write at low voltage. This feature is used in a 256 kb nonvolatile memory that operates at 3 V power supply with a read/write time of 100 ns. Active current is 3 mA at 200 ns cycle time at 3 V for battery operation. The cell consists of 1 transistor and 1 capacitor per bit (1T1C) permitting a high level of integration. For low-voltage low-power operation, use is made of a preset reference-cell circuit, wordline boost circuits with a ferroelectric boosting capacitor and a divided-cell plate circuit.
Starting Page	268
Ending Page	269
File Size	260074
Page Count	2
File Format	PDF
ISBN	0780318447
DOI	10.1109/ISSCC.1994.344646
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-02-16
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonvolatile memory Ferroelectric materials Capacitors Circuits Low voltage Random access memory Automatic logic units Ferroelectric films Electrodes Springs
Content Type	Text
Resource Type	Article

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