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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Takahashi, H. Kinoshita, M. Morita, K. Shirai, T. Sato, T. Kimura, T. Yuzurihara, H. Inoue, S. |
| Copyright Year | 2004 |
| Description | Author affiliation: Canon, Ayase, Japan (Takahashi, H.; Kinoshita, M.; Morita, K.; Shirai, T.; Sato, T.; Kimura, T.; Yuzurihara, H.; Inoue, S.) |
| Abstract | A CMOS image sensor with a shared 1.5 transistor/pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 /spl mu/V noise floor and 50 pA/cm/sup 2/ dark current at 45/spl deg/C. The chip is fabricated in a thin planarized 0.35 /spl mu/m 1P2M CMOS process. |
| Starting Page | 108 |
| Ending Page | 516 |
| File Size | 594046 |
| Page Count | 409 |
| File Format | |
| ISBN | 0780382676 |
| ISSN | 01936530 |
| DOI | 10.1109/ISSCC.2004.1332617 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-02-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Pixel Digital images Image sensors Photodiodes CMOS image sensors Clocks Charge transfer Turning Sensor phenomena and characterization CMOS process |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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