NDLI: Power-transistor switching circuits

Content Provider	IEEE Xplore Digital Library
Author	Slobodzinski, E. Huang, C.
Copyright Year	1955
Description	Author affiliation: Sylvania Electric Products, Inc., Ipswich (Slobodzinski, E.)
Abstract	Summary form only given. This paper is a report of an investigation which included measurements of relevant 2NG8 PNP-power-transistor parameters and the developmetlt of a method for the design of high-power switrhing circuits with good trigger sensitivity and dc stability over wide temperature ranges. These design techniques can similarly be used for NPN power transistors. The relevant parameters of the simplified dc equivalent circuit are found. The methods and results of the measurements of these parameters are presented, including their variation with temperature and current. This data enables the designer to design a flip-flop circuit for a particular bias condition with temperature considerations as follows. When the ambient temperature is raised, excessive thermal collector current will cause the emitter junction of the OFF transistor to inject carriers. This is a cumulative effect resulting in the OFF transistor turning ON. A means of compensating for this instability is to use a suitable base bias to keep the OFF emitter from injecting carriers. On the other hand, excessive compensating.bias results in a circuit that will not have a stable ON state.
Starting Page	21
Ending Page	21
File Size	71242
Page Count	1
File Format	PDF
DOI	10.1109/ISSCC.1955.1188783
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1955-02-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switching circuits Flip-flops Circuit analysis Design methodology Circuit stability Temperature distribution Temperature sensors Power transistors Equivalent circuits Turning
Content Type	Text
Resource Type	Article

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