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Content Provider | IEEE Xplore Digital Library |
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Author | Hee-Bok Kang Hun-Woo Kye Geun-Il Lee Je-Hoon Park Jun-Hwan Kim Seaung-Suk Lee Suk-Kyoung Hong Young-Jin Park Jin-Yong Chung |
Copyright Year | 2002 |
Description | Author affiliation: Memory R&D Center, Hynix Semicond., Ichon, South Korea (Hee-Bok Kang) |
Abstract | This work develops three concepts: low-voltage operation with boost voltage control of bitline and plateline, reduced bitline capacitance with multiple divided sub cell array, and increased chip performance with write operation sharing both active and precharge time period. A 256 kb test chip with 3.0/spl times/1.0 /spl mu/m/sup 2/ 1T1C memory cells in 0.25 /spl mu/m design roles is expected to achieve 180 ns access and 70 ns precharge at 1.5 V based on internal probing. |
Sponsorship | IEEE Solid-State Circuits Soc. |
Starting Page | 158 |
Ending Page | 159 |
File Size | 550333 |
Page Count | 2 |
File Format | |
ISBN | 0780373359 |
DOI | 10.1109/ISSCC.2002.992984 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2002-02-07 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Switches Ferroelectric films Polarization Capacitance Random access memory Nonvolatile memory Ferroelectric materials Voltage control Variable structure systems Research and development |
Content Type | Text |
Resource Type | Article |
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