NDLI: A density-functional study of defect volatility in amorphous silicon dioxide

Content Provider	IEEE Xplore Digital Library
Author	Wimmer, Y. Goes, W. El-Sayed, A.-M. Shluger, A.L. Grasser, T.
Copyright Year	2015
Description	Author affiliation: Vienna Univ. of Technol., Vienna, Austria (Wimmer, Y.; Goes, W.; El-Sayed, A.-M.; Grasser, T.) \|\| Univ. Coll. London, London, UK (Shluger, A.L.)
Abstract	Hole trapping in the gate insulator of pMOS transistors has been linked to a wide range of detrimental phenomena, including random telegraph noise (RTN), 1/ f noise, negative bias temperature instability (NBTI), stress-induced leakage currents (SILC) and hot-carrier degradation. Recently we were able to show that the hydrogen bridge (HB) and hydroxyl E' centers (H-E'centers) are likely candidates for BTI defects in amorphous silicon dioxide $(a-SiO_{2}).$ In time-dependent defect spectroscopy (TDDS) measurements, it was observed that defects tend to dis- and reappear in the measurements. This so called volatility is not a rare event, but occurs for a majority of the defects. In this work we investigate whether this particular behavior could be explained by an extension of our four-state model. As both of the investigated defect candidates contain hydrogen, we propose that the behavior could be explained by the hydrogen atom moving away from the defect site onto a neighboring oxygen atom and back again. Our results show that the suggested mechanism is likely to occur for hydroxyl E' centers, but not for the hydrogen bridges.
Starting Page	44
Ending Page	47
File Size	1405232
Page Count	4
File Format	PDF
ISBN	9781467378581
ISSN	19461569
e-ISBN	9781467378604
DOI	10.1109/SISPAD.2015.7292254
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Energetics of hydrogen in amorphous silicon: an ab initio study (1997).

Defect Density in Doped Amorphous Layer and Interface of Silicon Heterojunction Devices Obtained with the Constant Photocurrent Method

Hydrogen, microstructure and defect density in hydrogenated amorphous silicon

Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Capturing properties of three-fold coordinated silicon atom in silicon nitride: a positive correlation energy model (2003).

Determination of Positive Mobile Ion Density in Silicon Dioxide by Hydrogenated Amorphous Silicon Field Effect Technique

Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon (solar cells)

Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films

A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells

A density-functional study of defect volatility in amorphous silicon dioxide

Similar Documents

Energetics of hydrogen in amorphous silicon: an ab initio study (1997).

Defect Density in Doped Amorphous Layer and Interface of Silicon Heterojunction Devices Obtained with the Constant Photocurrent Method

Hydrogen, microstructure and defect density in hydrogenated amorphous silicon

Temperature-dependent defect density measurements in hydrogenated amorphous silicon

Capturing properties of three-fold coordinated silicon atom in silicon nitride: a positive correlation energy model (2003).

Determination of Positive Mobile Ion Density in Silicon Dioxide by Hydrogenated Amorphous Silicon Field Effect Technique

Saturation behavior of the light-induced defect density in hydrogenated amorphous silicon (solar cells)

Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films

A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells

A density-functional study of defect volatility in amorphous silicon dioxide