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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Crum, D.M. Valsaraj, A. Register, L.F. Banerjee, S.K. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA (Crum, D.M.; Valsaraj, A.; Register, L.F.; Banerjee, S.K.) |
| Abstract | We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model altered energy valley offsets and associated redistribution of carriers in k-space, and quantum-confined scattering rates, including a new approach to model surface roughness scattering. We illustrate the capabilities of the simulator using different levels of modeling, with an emphasis on modeling nano-scale FinFETs with degenerate carrier populations, including III-V devices. |
| Starting Page | 109 |
| Ending Page | 112 |
| File Size | 985752 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479952878 |
| ISSN | 19461569 |
| e-ISBN | 9781479952885 |
| DOI | 10.1109/SISPAD.2014.6931575 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-09-09 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Scattering FinFETs Monte Carlo methods Silicon Potential well Logic gates device modeling FinFET Monte Carlo quantum-confinement surface roughness scattering III-V n-MOS scaling degenerate semiconductors |
| Content Type | Text |
| Resource Type | Article |
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