NDLI: Large-scale 3D TCAD study of the impact of shorts in phase controlled thyristors

Content Provider	IEEE Xplore Digital Library
Author	Bellini, M. Vobecky, J.
Copyright Year	2014
Description	Author affiliation: Corp. Res. Center, ABB Switzerland, Dättwil, Switzerland (Bellini, M.) \|\| ABB Semicond. Ltd., Lenzburg, Switzerland (Vobecky, J.)
Abstract	Continuous advances in computer hardware and solving algorithm enable more pervasive use of 3D TCAD simulations for both nanoscale and power semiconductor devices. However, while BiMOS power semiconductor devices such as IGBTs require relatively small 3D simulated structures (of the order of fa $10×10×1000/im^{3}),$ bipolar power devices such as thyristors require much larger simulated structures of the order of fa 10 $mm^{3}.$ This work presents large scale 3D simulations of Phase Controlled Thyristors and describes the technique used to reduce computation times to extents compatible with industrial practice. 3D TCAD is used to understand the impact of cathode shorts on figures of merit such as the breakdown voltage and dV/dt.
Starting Page	265
Ending Page	268
File Size	1578894
Page Count	4
File Format	PDF
ISBN	9781479952878
ISSN	19461569
e-ISBN	9781479952885
DOI	10.1109/SISPAD.2014.6931614
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-09-09
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Thyristors Cathodes Three-dimensional displays Solid modeling Doping Plasmas
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

3D-TCAD simulation study of the novel T-FinFET structure for sub-14nm metal-oxide-semiconductor field-effect transistor

Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies

3D TCAD simulation of advanced CMOS image sensors

Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation

USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation

TCAD simulation of interface traps related variability in bulk decananometer mosfets

TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior

LSP simulations of the Self-Magnetic-Pinch-diode

Large-scale 3D TCAD study of the impact of shorts in phase controlled thyristors

Similar Documents

3D-TCAD simulation study of the novel T-FinFET structure for sub-14nm metal-oxide-semiconductor field-effect transistor

Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies

3D TCAD simulation of advanced CMOS image sensors

Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation

USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation

TCAD simulation of interface traps related variability in bulk decananometer mosfets

TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior

LSP simulations of the Self-Magnetic-Pinch-diode

Large-scale 3D TCAD study of the impact of shorts in phase controlled thyristors