NDLI: Physical Model of Incomplete Ionization for Silicon Device Simulation

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2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

2011 International Conference on Simulation of Semiconductor Processes and Devices

2010 International Conference on Simulation of Semiconductor Processes and Devices

2009 International Conference on Simulation of Semiconductor Processes and Devices

2008 International Conference on Simulation of Semiconductor Processes and Devices

2006 International Conference on Simulation of Semiconductor Processes and Devices

Conference Committee

Table of contents

Design Tools for Emerging Technologies

Model to Hardware Matching; For nano-meter Scale Technologies

TCAD as an integral part of the semiconductor manufacturing environment

Active and Passive RF Device Compact Modeling in CMOS Technoloies

Comparison of device performance and scaling properties of cylindrical-nanowire (CNW) and carbon-nanotube (CNT) transistors

Carbon Nanoribbons: An Alternative to Carbon Nanotubes

Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations and Length Dependence

Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

Analytical Modeling of Electron Mobility in Strained Germanium

Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

Modeling of Electron Mobility Degradation for HfSiON MISFETs

Physical Model of Incomplete Ionization for Silicon Device Simulation

Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

A tool development of rigorous Schrödinger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon

3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

Modeling of Defect Evolution and TED under Stress based on DFT Calculations

Ab-initio Calculations of Shear Stress Effects on Defects and Diffusion in Silicon

Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

Predictive models for co-doping effects between combinations of donors (P/As/Sb) and acceptors (B/Ga/In)

Numerical Simulation of RF Noise in Si Devices

Physics-Based Phase Noise Analysis of CMOS RF Oscillators

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Device Characteristics with Potential Fluctuation Induced by Nonuniformity at Gate Oxide Interface with Multifractal Analysis

Device Simulation of Random Dopant Effects in Ultra-small MOSFETs Based on Advanced Physical Models

Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

Stress Sensitivity of PMOSFET Under High Mechanical Stress

Multi-Layer Model for Stressor Film Deposition

Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion

Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations

Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

Interface Barrier Abruptness and Work Function requirements for scaling Schottky Source-Drain MOS Transistors

Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

Vacancy At Si-SiO2 Interface: Ab-Initio Study

Quantum chemical molecular dynamics analysis of the effect of oxygen vacancies and strain on dielectric characteristic of $hfo_{2-x}$ films

Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation

Analysis and Compact Modeling of MOSFET High-Frequency Noise

A compact model for Phase Change Memories

A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors

Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-k dielectrics

Efficient 2D approximation for Layout-dependent Relaxation of Etch Stop Liner Stress due to Contact Holes

Optimization of Halo Implant Using 3D TCAD for Nanoscale MuGFETs

Novel Mechanism of Neutron-Induced Multi-Cell Error in CMOS Devices Tracked Down from 3D Device Simulation

Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films

Monte Carlo simulation of ultimate DGMOS based on a Pearson Effective Potential formalism

Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations

Doping Dependent Conductivity in Organic Semiconductors

The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs

3D Mesh Generation with Wavelet-Driven Adaptivity

Efficient multi sub-band Monte Carlo simulation of nano-scaled Double Gate MOSFETs

Impact of Wafer and Technology Selection on Liner Stress Mobility Enhancement

Modeling of Cross-Talk Effects in Floating-Gate Devices Using TCAD Simulations

A semi-analytical model for the subthreshold behavior of SOI FinFLASH structures

Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Device Performance and Package Induced Self Heating Effects At Cryogenic Temperatures

Flow Simulation: Advanced Dielectric Etch Equipment Design and Process Development

Atomistic-Level Modeling for Thickness Dependence of Electron Mobility in InSb QW-FETs

Simulation of Multiple Gate FinFET Device Gate Capacitance and Performance with Gate Length and Pitch Scaling

On the analysis of random doping induced fluctuations in ultra small semiconductor devices by linearization

Modeling of stress-dependent wet etch characteristic for P-SOG STI process

Low-Field Mobility in Strained Silicon with `Full Band' Monte Carlo Simulation using k.p and EPM Bandstructure

3-Dimensional Analysis on the GIDL Current of Body-tied Triple Gate FinFET

Modeling of High Frequency Noise in SiGe HBTs

Numerical Analysis of Destruction Mechanisms of NPT- and FS-IGBTs in Forward Blocking Mode

Monte Carlo simulation of 3D nonvolatile memory

Simulation Study on Channel Length Scaling of High Performance Partially Depleted Metal Gate and Poly Gate SOI MOSFETs

Scaling Limit of CMOS Supply Voltage from Noise Margin Considerations

Power/Performance Based Scalability Comparisons between Conventional and Novel Transistors Down to 32nm Technology Node

Effect of Body Doping on the Scaling of Ultrathin SOI MOSFETs

Simulation Study of a Metal / High-κ Gate Stack for Low-Power Applications

Scaling Limits of Capacitorless Double Gate DRAM Cell

Theory of Fermi Level Pinning of High-k Dielectrics

Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies

A Madelung Fluid Based Density Gradient Model for Large Barrier Tunneling Calculations

Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase

A New Statistical Model for SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution

TCAD Modeling of Negative Bias Temperature Instability

Modeling of the Leakage Current Distribution of 16M Stacked Single Crystal (SC)-like SOI pMOSFETs using Green's function method

A 3-D Time-Dependent Green's Function Approach to Modeling Electromagnetic Noise in On-Chip Interconnect Networks

Mesoscopic resist processing simulation in optical lithography

Grain Based Modeling of Stress Induced Copper Migration for 3D-IC Interwafer Vias

Development of a Full 3D NEGF Nano-CMOS Simulator

Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications

A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies

First Self-Consistent Full-Band 2D Monte Carlo 2D Poisson Device Solver for Modeling SiGe Heterojunction p-Channel Devices

Multiple Type Grid Approach for 3D Process Simulation

3-D Process Simulation of CMOS Inverter Based on Selete 65nm Full Process

A Full 3D TCAD Simulation Study of Line-Width Roughness Effects in 65 nm Technology

Monte Carlo Simulation of Boron Implantation into (100) Germanium

Novel Asymmetric Raised Source/Drain Extension MOSFET

Band to Band Tunneling limited Off state Current in Ultra-thin Body Double Gate FETs with High Mobility Materials : III-V, Ge and strained Si/Ge

Analysis of Electronic Threshold of PRAM Cell Operation

Design Optimization of Large Area Si/SiGe Thermoelectric Generators

2005 International Conference On Simulation of Semiconductor Processes and Devices

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

International Conferencre on Simulation of Semiconductor Processes and Devices

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

Physical Model of Incomplete Ionization for Silicon Device Simulation

Content Provider	IEEE Xplore Digital Library
Author	Schenk, A. Altermatt, P.P. Schmithusen, B.
Copyright Year	2006
Description	Author affiliation: Integrated Syst. Lab., ETH Zurich (Schenk, A.)
Abstract	An empirical model of incomplete ionization (ii) in phosphorus-, arsenic-, and boron-doped crystalline silicon is derived from photoluminescence, conductance, and mobility measurements. It is found that up to 25% of phosphorus and boron atoms and up to 35% of arsenic atoms are non-ionized at room temperature near the Mott transition, whereas there is no significant amount of ii at dopant densities far above the Mott transition. Simplified equations of ii suitable for implementation in device simulators are exploited to study the effect of ii on the performance of bipolar and MOS devices. It is demonstrated that ii can increase the current gain of bipolar transistors by up to 25%
Sponsorship	IEEE Electron Devices Soc
Starting Page	51
Ending Page	54
File Size	4474954
Page Count	4
File Format	PDF
ISBN	1424404045
DOI	10.1109/SISPAD.2006.282836
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionization Silicon devices Atomic measurements Crystallization Photoluminescence Boron Temperature Equations MOS devices Bipolar transistors
Content Type	Text
Resource Type	Article

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