NDLI: A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

Content Provider	IEEE Xplore Digital Library
Author	Hane, M. Kawakami, Y. Nakamura, H. Yamada, T. Kumagai, K. Watanabe, Y.
Copyright Year	2003
Description	Author affiliation: Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan (Hane, M.; Kawakami, Y.)
Abstract	A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for /spl alpha/-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-/spl mu/m SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.
Sponsorship	IEEE Electron Devices Soc
Starting Page	239
Ending Page	242
File Size	463027
Page Count	4
File Format	PDF
ISBN	0780378261
DOI	10.1109/SISPAD.2003.1233681
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Neutrons Circuit simulation Silicon Discrete event simulation CMOS technology Sampling methods National electric code Electronic equipment testing Particle beams
Content Type	Text
Resource Type	Article

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