NDLI: Gate leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness

Content Provider	IEEE Xplore Digital Library
Author	Zhiyi Han Chung-Kai Lin Goldsman, N. Mayergoyz, I. Yu, S. Stettler, M.
Copyright Year	1999
Description	Author affiliation: Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA (Zhiyi Han)
Abstract	As device dimensions shrink toward 0.1 /spl mu/m, gate oxides are becoming so thin that MOSFET gate leakage current and oxide degradation are becoming limiting issues. We provide a more rigorous way to calculate gate leakage current. To achieve this we build upon the Spherical Harmonic Method of modeling, which deterministically solves the Boltzmann equation for an entire device. The method gives the distribution function and is 1000 times faster than MC. Once the distribution function is calculated, the tunneling probability is derived from the first principle WKB method. The barrier lowering effect is accounted for by the method of image charges. We calculate gate leakage current as a function of DC bias. The thermionic and tunneling components are compared at different DC bias points. The dependence of gate leakage current on gate oxide thickness is simulated.
Starting Page	247
Ending Page	250
File Size	373944
Page Count	4
File Format	PDF
ISBN	4930813980
DOI	10.1109/SISPAD.1999.799307
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-09-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Appl. Physics
Subject Keyword	Leakage current Boltzmann equation Tunneling Electrons Distribution functions Monte Carlo methods Thermionic emission Current density Potential energy Partial differential equations
Content Type	Text
Resource Type	Article

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