NDLI: Robustness and reliability of BiCMOS embedded RF-MEMS switch

Content Provider	IEEE Xplore Digital Library
Author	Kaynak, M. Korndörfer, F. Wietstruck, M. Knoll, D. Scholz, R. Wipf, C. Krause, C. Tillack, B.
Copyright Year	2011
Description	Author affiliation: IHP, Frankfurt (Oder), Germany (Kaynak, M.; Korndörfer, F.; Wietstruck, M.; Knoll, D.; Scholz, R.; Wipf, C.; Krause, C.; Tillack, B.)
Abstract	Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as C, C, and pull-in voltage, with the ambient temperature are investigated in the range of −30°C to 150°C. The biggest temperature effect, a decrease by a factor of 2 between −30°C and 150°C, is observed for C, while C weakly increases by only about 6% in this temperature range. For the pull-in voltage, practically no T-effect is observed. The power handling performance is also analyzed. A DC self-actuation voltage of 20V was estimated. To hold the membrane in down position, an 1.2V DC voltage drop or 15dBm RF power was found to be necessary. Finally, a new reliability test was applied, using Laser-Doppler (LD) Vibrometry technique to analyze the change in the switch dynamic behavior after billion times of operation. The measurement results show that this behavior hardly changes for up to 50 billion times operation.
Starting Page	177
Ending Page	180
File Size	1211427
Page Count	4
File Format	PDF
ISBN	9781424480609
e-ISBN	9781424480616
DOI	10.1109/SIRF.2011.5719336
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-01-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Biomembranes Radio frequency Temperature measurement Switching circuits Robustness reliability RF-MEMS switch robustness
Content Type	Text
Resource Type	Article

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