NDLI: Millimeter-wave integrated waveguides on silicon

Content Provider	IEEE Xplore Digital Library
Author	Gentile, G. Dekker, R. de Graaf, P. Spirito, M. de Vreede, L.C.N. Rejaei, B.
Copyright Year	2011
Description	Author affiliation: Elca Group, Dimes, TU Delft University, 2628 CD, The Netherlands (Gentile, G.; Dekker, R.; Spirito, M.; de Vreede, L.C.N.; Rejaei, B.) \|\| Philips Research Laboratories, Eindhoven, 5656 AA, The Netherlands (de Graaf, P.)
Abstract	An integrated waveguide realized on (high resistivity) silicon using an IC-compatible process is reported in this work. The manufacturing process flow is based on substrate transfer technique and KOH etching, giving the resulting waveguide a trapezoidal cross-section. For this structure, the analysis of the propagating modes described here shows that it is possible to define a TE-like mode, whose field distribution strongly resembles the classical TE mode of a rectangular waveguide. The cut-off frequency of the first higher order mode is also analyzed for different waveguide aspect ratios (width over height). In the fundamental mode operation, extremely low losses smaller than 0.12 dB/mm up to 50 GHz and 0.3 dB/mm up to 100 GHz are obtained respectively for a waveguide with cut-off 35 GHz and 77 GHz.
Starting Page	37
Ending Page	40
File Size	502612
Page Count	4
File Format	PDF
ISBN	9781424480609
e-ISBN	9781424480616
DOI	10.1109/SIRF.2011.5719314
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-01-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Rectangular waveguides Waveguide transitions Substrates Silicon Loss measurement Cutoff frequency Frequency measurement transmission lines IC compatible Millimeter-wave interconnects dielectric filled waveguide silicon-on-glass substrate integrated waveguide (SIW) substrate transfer low losses
Content Type	Text
Resource Type	Article

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